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Oxyde d’hafnium(IV), 99 % (base métallique à l’exclusion de Zr), Thermo Scientific Chemicals
Identifiants chimiques
CAS | 12055-23-1 |
---|---|
Formule moléculaire | HfO2 |
Poids moléculaire (g/mol) | 210.49 |
Numéro MDL | MFCD00003565 |
Clé InChI | WIHZLLGSGQNAGK-UHFFFAOYSA-N |
Nom IUPAC | Dioxidandiide de hafnium(4+) |
SMILES | [O--].[O--].[Hf+4] |
Description
Hafnium(IV) oxide is used in optical coatings and in advanced metal-oxide-semiconductor devices. It is used as a gate insulator in field-effect transistors due to its high dielectric constant. It plays an important role as a possible candidate for resistive-switching memories, as a refractory material in the insulation of devices such as thermocouples and as a high-κ dielectric in DRAM capacitors. Also, used in the preparation of hafnium tetrachloride.
This Thermo Scientific Chemicals brand product was originally part of the Alfa Aesar product portfolio. Some documentation and label information may refer to the legacy brand. The original Alfa Aesar product / item code or SKU reference has not changed as a part of the brand transition to Thermo Scientific Chemicals.
Identifiants chimiques
12055-23-1 | |
210.49 | |
WIHZLLGSGQNAGK-UHFFFAOYSA-N | |
[O--].[O--].[Hf+4] |
HfO2 | |
MFCD00003565 | |
Dioxidandiide de hafnium(4+) |
Spécification
Hafnium(IV) oxide | |
12055-23-1 | |
99% (Metals Basis) | |
MFCD00003565 | |
Insoluble in water. | |
[O--].[O--].[Hf+4] | |
210.49 | |
9.68 g/mL |
2774°C | |
Poudre maillée de -325 | |
HfO2 | |
3260 | |
WIHZLLGSGQNAGK-UHFFFAOYSA-N | |
Dioxidandiide de hafnium(4+) | |
210.49 |
Sécurité et traitement
missing translation for 'einecsNumber' : 235-013-2
missing translation for 'tsca' : Oui
Recommended Storage : Température ambiante
RUO – Research Use Only